深圳市烨弘轩电子有限公司

DRV5012AEDMRR 制造商: Texas Instruments

产品种类: 板机接口霍耳效应/磁性传感器

类型: Digital Latch Hall Effect Sensor

工作电源电流: 160 uA

输出电流: 5 mA

工作点值/值: 0.6 mT to 3.3 mT

/释放点（Brp）: - 3.3 mT to - 0.6 mT

工作电源电压: 1.65 V to 5.5 V

工作温度: - 40 C

工作温度: + 85 C

安装风格: SMD/SMT

封装 : X2SON-4

封装: Reel

输出类型: Push-Pull  

输出电压: 5.5 V  

DRV5012AEDMRR 产品: Hall Effect Latches  

灵敏度: 2 mT  

系列: DRV5012  

端接类型: SMD/SMT  

商标: Texas Instruments  

产品类型: Hall Effect / Magnetic Sensors  

工厂包装数量: 3000  

子类别: Sensors  

电源电压-: 5.5 V  

电源电压-: 1.65 V

DRV5012AEDMRR 描述

The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.

DRV5012AEDMRR 特性

Industry-Leading Low-Power Consumption

Pin-Selectable Sampling Rate:

SEL = Low: 20 Hz Using 1.3 μA (1.8 V)

SEL = High: 2.5 kHz Using 142 μA (1.8 V)

1.65- to 5.5-V Operating VCC Range

High Magnetic Sensitivity: ±2 mT (Typical)

Robust Hysteresis: 4 mT (Typical)

Push-Pull CMOS Output

Small and Thin X2SON Package

–40°C to +85°C Operating Temperature Range